HEF40098B Просмотр технического описания (PDF) - NXP Semiconductors.
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HEF40098B Datasheet PDF : 12 Pages
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NXP Semiconductors
HEF40098B
3-state hex inverting buffer
9. Recommended operating conditions
Table 5.
Symbol
VDD
VI
Tamb
∆t/∆V
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
ambient temperature
in free air
input transition rise and fall rate
VDD = 5 V
VDD = 10 V
VDD = 15 V
10. Static characteristics
Min Typ Max
3
-
15
0
-
VDD
−40 -
+85
-
-
3.75
-
-
0.5
-
-
0.08
Unit
V
V
°C
ns/V
ns/V
ns/V
Table 6. Static characteristics
VSS = 0 V; VI = VSS or VDD; unless otherwise specified.
Symbol Parameter
Conditions
VDD
VIH
HIGH-level input voltage |IO| < 1 µA
5V
10 V
15 V
VIL
LOW-level input voltage |IO| < 1 µA
5V
10 V
15 V
VOH
HIGH-level output voltage |IO| < 1 µA
5V
10 V
15 V
VOL
LOW-level output voltage |IO| < 1 µA
5V
10 V
15 V
IOH
HIGH-level output current VO = 2.5 V
5V
VO = 4.6 V
5V
VO = 9.5 V
10 V
VO = 13.5 V
15 V
IOL
LOW-level output current VO = 0.4 V;
4.75 V
VO = 0.5 V;
10 V
VO = 1.5 V;
15 V
II
input leakage current
VI = 0 V or 15 V 15 V
IDD
supply current
IO = 0 A
5V
10 V
15 V
IOZ
OFF-state output current
CI
input capacitance
15 V
Tamb = −40 °C Tamb = 25 °C Tamb = 85 °C Unit
Min Max Min Max Min Max
3.5
-
3.5
-
3.5 - V
7.0
-
7.0
-
7.0 - V
11.0 - 11.0 - 11.0 - V
-
1.5
-
1.5
-
1.5 V
-
3.0
-
3.0
-
3.0 V
-
4.0
-
4.0
-
4.0 V
4.95 -
4.95 -
4.95 - V
9.95 -
9.95 -
9.95 - V
14.95 - 14.95 - 14.95 - V
- 0.05 - 0.05 - 0.05 V
- 0.05 - 0.05 - 0.05 V
- 0.05 - 0.05 - 0.05 V
−3.8 - −3.2 - −2.5 - mA
−1.2 - −1.0 - −0.8 - mA
−3.8 - −3.2 - −2.5 - mA
−12.0 - −10.0 - −8.0 - mA
3.5
-
2.9
-
2.3 - mA
12.0 - 10.0 - 8.0 - mA
24.0 - 20.0 - 16.0 - mA
-
0.3
-
0.3
-
1.0 µA
-
4
-
4
-
30 µA
-
8
-
8
-
60 µA
-
16
-
16
- 120 µA
-
1.6
-
1.6
- 12.0 µA
-
-
- 7.5 -
- pF
HEF40098B_5
Product data sheet
Rev. 05 — 31 October 2008
© NXP B.V. 2008. All rights reserved.
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