2N3906 Просмотр технического описания (PDF) - Nanjing International Group Co
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2N3906 Datasheet PDF : 3 Pages
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2N3905 / 2N3906
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
DC Current Gain
at -VCE = 1 V, -IC = 0.1 mA
at -VCE = 1 V, -IC = 1 mA
at -VCE = 1 V, -IC = 10 mA
at -VCE = 1 V, -IC = 50 mA
at -VCE = 1 V, -IC = 100 mA
2N3905
hFE
30
-
2N3906
hFE
60
-
2N3905
hFE
40
-
2N3906
hFE
80
-
2N3905
hFE
50
150
2N3906
hFE
100
300
2N3905
hFE
30
-
2N3906
hFE
60
-
2N3905
hFE
15
-
2N3906
hFE
30
-
Collector Cutoff Current
at -VCB = 30 V
Emitter Cutoff Current
at -VEB = 6 V
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
-ICBO
-
-IEBO
-
-V(BR)CBO
40
-V(BR)CEO
40
-V(BR)EBO
6
-VCEsat
-
-VCEsat
-
50
50
-
-
-
0.25
0.4
Base Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
Gain Bandwidth Product
at -VCE = 20 V, -IC = 10 mA, f = 100 MHz
-VBEsat
-
-VBEsat
-
2N3905
fT
200
2N3906
fT
250
0.85
0.95
-
-
Collector Base Capacitance
at -VCB = 5 V, f = 100 KHz
Emitter Base Capacitance
at -VEB = 0.5 V, f = 100 KHz
Thermal Resistance Junction to Ambient
Ccb
-
4.5
Ceb
RthA
-
10
-
250 1)
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Unit
-
-
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
V
V
V
MHz
MHz
pF
pF
K/W
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