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Philips Semiconductors
Band-switching diodes
Product specification
BA682; BA683
handbook1, .h5alfpage
Cd
(pF)
1
0.5
MBG309
BA682
BA683
0
10−1
1
10 VR (V) 102
handbook, h2alfpage
rD
(Ω)
1
0
1
MBG310
BA683
BA682
10
IF (mA)
10 2
f = 1 MHz; Tj = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
f = 200 MHz; Tj = 25 °C.
Fig.5 Diode forward resistance as a function of
forward current; typical values.
1996 Mar 13
4