BA683 Просмотр технического описания (PDF) - Philips Electronics

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BA683

Band-switching diodes

Philips Electronics 

Philips Semiconductors

Band-switching diodes

Product specification

BA682; BA683

FEATURES

• Continuous reverse voltage:

max. 35 V

• Continuous forward current:

max. 100 mA

• Low diode capacitance:

max. 1.5 pF

• Low diode forward resistance:

max. 0.7 to 1.2 Ω.

APPLICATION

• Band-switching in VHF television

tuners.

DESCRIPTION

Planar high performance band-switching diodes in a glass SOD80

SMD package.

handbook, 4 columns

k

a

MAM061

Fig.1 Simplified outline (SOD80) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VR

continuous reverse voltage

IF

continuous forward current

Tstg

storage temperature

Tj

junction temperature

MIN.

−

−

−65

−

MAX.

35

100

+150

150

UNIT

V

mA

°C

°C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

Cd

diode capacitance

BA682

BA683

rD

diode forward resistance

BA682

BA683

rD

diode forward resistance

BA682

BA683

CONDITIONS

IF = 100 mA; see Fig.2

see Fig.3

VR = 20V

VR = 20 V; Tj = 75 °C

f = 1 MHz; VR = 1 V; see Fig.4

f = 1 MHz; VR = 3 V; see Fig.4

IF = 3 mA; f = 200 MHz; see Fig.5

IF = 10 mA; f = 200 MHz; see Fig.5

MAX. UNIT

1.0 V

50

nA

1

µA

1.5 pF

1.25 pF

1.20 pF

0.7 Ω

1.2 Ω

0.5 Ω

0.9 Ω

1996 Mar 13

2

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