2N5068 Просмотр технического описания (PDF) - Inchange Semiconductor

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2N5068

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2N5067 2N5068 2N5069

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

2N5067

40

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5068 IC=0.2A ;IB=0

60

V

2N5069

80

VCEsat-1 Collector-emitter saturation voltage IC=1A; IB=0.1A

0.4

V

VCEsat-2 Collector-emitter saturation voltage IC=5A ;IB=1A

1.5

V

VBE

Base-emitter on voltage

IC=1A ; VCE=2V

1.2

V

ICEO

Collector cut-off current

VCE=Rated VCEO; IB=0

1.0 mA

ICBO

Collector cut-off current

ICEX

Collector cut-off current

IEBO

Emitter cut-off current

VCB=Rated VCBO; IE=0

VCE= Rated VCEO; VBE(off)=1.5V

TC=150℃

VEB=5V; IC=0

0.1 mA

1.0

2.0

mA

1.0 mA

hFE-1

DC current gain

IC=1A ; VCE=2V

20

80

hFE-2

DC current gain

IC=5A ; VCE=2V

7

fT

Transition frequency

IC=1A ; VCE=10V

4

MHz

2

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