2N5068 Просмотр технического описания (PDF) - Inchange Semiconductor
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2N5068 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5067 2N5068 2N5069
DESCRIPTION
·With TO-3 package
·Complement to type 2N4901/4902/4903
·Low collector saturation voltage
APPLICATIONS
·For general–purpose switching
and power amplifier applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
2N5067
VCBO
Collector-base voltage 2N5068
2N5069
2N5067
VCEO
Collector-emitter voltage 2N5068
2N5069
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
40
60
80
40
60
80
5
5
10
1
87.5
150
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
VALUE
2.0
UNIT
℃/W
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