IDT71V416YL12YGI Просмотр технического описания (PDF) - Integrated Device Technology
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IDT71V416YL12YGI Datasheet PDF : 9 Pages
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IDT71V416YS, IDT71V416YL 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
Symbol
VDD
VIN, VOUT
Rating
Supply Voltage Relative to
VSS
Terminal Voltage Relative to
VSS
TBIAS Temperature Under Bias
TSTG Storage Temperature
Value
Unit
-0.5 to +4.6
V
-0.5 to VDD+0.5 V
-55 to +125
oC
-55 to +125
oC
Recommended Operating
Temperature and Supply
Voltage
Grade
Temperature
VSS
Commercial
0OC to +70OC
0V
Industrial
–40OC to +85OC
0V
VDD
See Below
See Below
6442 tbl 05
PT Power Dissipation
IOUT DC Output Current
1
W Recommended DC Operating
50
mA Conditions
6442 tbl 04
NOTE:
Symbol
Parameter
Min. Typ. Max. Unit
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
VDD Supply Voltage
3.0 3.3
3.6
V
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
VSS Ground
0
0
0
V
maximum rating conditions for extended periods may affect reliability.
VIH Input High Voltage
2.0
____
VDD+0.3(1)
V
VIL Input Low Voltage
-0.3(2)
____
0.8
V
NOTES:
6442 tbl 06
1. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
2. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.
Truth Table(1)
CS
OE
WE
BLE
BHE
H
X
X
X
X
L
L
H
L
H
L
L
H
H
L
L
L
H
L
L
L
X
L
L
L
L
X
L
L
H
L
X
L
H
L
L
H
H
X
X
L
X
X
H
H
NOTE:
1. H = VIH, L = VIL, X = Don't care.
I/O0-I/O7
High-Z
DATAOUT
High-Z
DATAOUT
DATAIN
DATAIN
High-Z
High-Z
High-Z
I/O8-I/O15
High-Z
High-Z
DATAOUT
DATAOUT
DATAIN
High-Z
DATAIN
High-Z
High-Z
Function
Deselected - Standby
Low Byte Read
High Byte Read
Word Read
Word Write
Low Byte Write
High Byte Write
Outputs Disabled
Outputs Disabled
6442 tbl 03
6.342
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