111MT160KS90PBF Просмотр технического описания (PDF) - Vishay Semiconductors
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111MT160KS90PBF Datasheet PDF : 9 Pages
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5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series
Three Phase Controlled Bridge Vishay High Power Products
(Power Modules), 55 A to 110 A
1000
900
800
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
700
600
500 11.MT..K Series
Per junction
400
1
10
100
94353_14
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
1200
1100
1000
900
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
800
700
600
500 11.MT..K Series
Per junction
400
0.01
0.1
1.0
94353_15
Pulse Train Duration (s)
Fig. 15 - Maximum Non-Repetitive Surge Current
10
Steady state value
RthJC = 1.07 K/W
1
RthJC = 0.86 K/W
RthJC = 0.70 K/W
(DC operation)
0.1
9.MT..K Series
5.MT..K Series
11.MT..K Series
0.01
Per junction
0.001
0.001
0.01
0.1
1
10
94353_16
Square Wave Pulse Duration (s)
Fig. 16 - Thermal Impedance ZthJC Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω;
tr = 0.5 μs, tp ≥ 6 μs
1
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
tr = 1 μs, tp ≥ 6 μs
(a)
(b)
(1) PGM = 100 W, tp = 500 μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
0.1
0.01
0.001
94353_17
VGD
IGD
0.01
(4) (3) (2) (1)
5.MT...K, 9.MT...K, 11.MT...K Series
Frequency Limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
1000
Document Number: 94353
Revision: 13-Aug-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
7
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