111MT160KS90PBF Просмотр технического описания (PDF) - Vishay Semiconductors

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111MT160KS90PBF

Three Phase Controlled Bridge (Power Modules), 55 A to 110 A

Vishay Semiconductors 

5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series

Vishay High Power Products Three Phase Controlled Bridge

(Power Modules), 55 A to 110 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VOLTAGE

CODE

80

100

5.MT...K

120

140

160

80

100

9.MT...K

120

11.MT...K

140

160

VRRM, MAXIMUM

REPETITIVE PEAK

REVERSE VOLTAGE

V

VRSM, MAXIMUM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

VDRM, MAXIMUM REPETITIVE

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

V

IRRM/IDRM,

MAXIMUM

AT TJ = 125 °C

mA

800

900

800

1000

1100

1000

1200

1300

1200

10

1400

1500

1400

1600

1700

1600

800

900

800

1000

1100

1000

1200

1300

1200

20

1400

1500

1400

1600

1700

1600

FORWARD CONDUCTION

PARAMETER

SYMBOL

Maximum DC output

current at case temperature

IO

Maximum peak, one-cycle

forward, non-repetitive

ITSM

on state surge current

Maximum I2t for fusing

I2t

Maximum I2√t for fusing

Low level value of

threshold voltage

High level value of

threshold voltage

Low level value on-state

slope resistance

High level value on-state

slope resistance

Maximum on-state

voltage drop

Maximum non-repetitve

rate of rise of turned on

current

Maximum holding current

Maximum latching current

I2√t

VT(TO)1

VT(TO)2

rt1

rt2

VTM

dI/dt

IH

IL

TEST CONDITIONS

5.MT...K

55

120° rect. conduction angle

85

t = 10 ms No voltage

390

t = 8.3 ms reapplied

410

t = 10 ms 100 % VRRM

330

t = 8.3 ms reapplied

t = 10 ms No voltage

345

Initial TJ = TJ maximum

770

t = 8.3 ms reapplied

700

t = 10 ms 100 % VRRM

540

t = 8.3 ms reapplied

500

t = 0.1 ms to 10 ms, no voltage reapplied

7700

(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum

1.17

(I > π x IT(AV)), TJ maximum

1.45

(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum

12.40

(I > π x IT(AV)), TJ maximum

11.04

Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction

2.68

TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV),

Ig = 500 mA, tr < 0.5 μs, tp > 6 μs

TJ = 25 °C, anode supply = 6 V,

resistive load, gate open circuit

TJ = 25 °C, anode supply = 6 V, resistive load

9.MT...K 11.MT...K UNITS

90

110

A

85

85

°C

950

1130

1000

1180

A

800

950

840

1000

4525

6380

4130

5830

A2s

3200

4510

2920

4120

45 250 63 800 A2√s

1.09

1.04

V

1.27

1.27

4.10

3.93

mΩ

3.59

3.37

1.65

1.57

V

150

A/μs

200

mA

400

www.vishay.com

2

For technical questions, contact: indmodules@vishay.com

Document Number: 94353

Revision: 13-Aug-08

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