MS5D3031 Просмотр технического описания (PDF) - Fuji Electric

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MS5D3031

SILICON DIODE

Fuji Electric 

Test

No.

Test

Items

Testing methods and Conditions

1 High Temp.

Storage

2 Low Temp.

Storage

3 Temperature

Humidity

Storage

4 Temperature

Humidity

Bias

5 Unsaturated

Pressurized

Vapor

6 Temperature

Cycle

7 Thermal

Shock

8 Steady state

Operating

life

9 Intermittent

Operating

life

10 High Temp.

Reverse

Bias

Temperature :Ｔstg max

Test duration : 1000h

Temperature :Ｔstg min

Test duration : 1000h

Temperature : 85±2°C

Relative humidity : 85±5%

Test duration : 1000h

Temperature : 85±2°C

Relative humidity : 85±5%

Bias Voltage : VRRM× 0.8

Test duration : 1000h

Temperature : 130±2°C

Relative humidity : 85±5%

Vapor pressure : 230kPa

Test duration : 48h

High temp. side : Tstg max

Room temp. : 5～35℃

Low temp. side : Tstg min

Duration time : HT 30min,RT 5min LT 30min

Number of cycles : 100 cycles

Fluid : pure water(running water)

High temp. side : 100+0/-5°C

Low temp. side : 0+5/-0°C

Duration time : HT 5min,LT 5min

Number of cycles : 100 cycles

Ta=25±5°C

Rated load

Test duration : 1000h

Tj=Tjmax ～50℃

3min ON, 3min OFF

Test duration : 10000cycles

Temperature : Ta=100 °C

Bias Voltage : VR=VRRM duty=1/2

Test duration : 1000h

Reference

Standard

EIAJ ED4701

EIAJ

ED4701/201

Sampling

number

22

Acceptance

number

EIAJ

ED4701/202

22

EIAJ

ED4701/103

22

test code C

EIAJ

ED4701/103

22

test code C

EIAJ

ED4701/103

22

test code F

EIAJ

(0 : 1)

ED4701/105

22

EIAJ

ED4701/307

22

test code A

22

EIAJ

22

ED4701/106

EIAJ

22

ED4701/101

Failure Criteria

IR ≦USL x 5

VF≦USL x 1.1

USL : Upper specification Limit

Fuji Electric Device Technology Co.,Ltd.

MS5D3031 5/12

H04-004-03a

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