XC7SH08 Просмотр технического описания (PDF) - NXP Semiconductors.
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XC7SH08 Datasheet PDF : 11 Pages
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NXP Semiconductors
XC7SH08
2-input AND gate
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V. For test circuit see Figure 6.
Symbol Parameter Conditions
tpd
propagation A and B to Y;
delay
see Figure 5
VCC = 3.0 V to 3.6 V
CL = 15 pF
CL = 50 pF
VCC = 4.5 V to 5.5 V
CL = 15 pF
CL = 50 pF
CPD
power
per buffer;
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
Min
Max
[1]
[2]
-
4.6 8.8 1.0 10.5
1.0
12.0
ns
-
6.5 12.3 1.0 14.0
1.0
16.0
ns
[3]
-
3.2 5.9 1.0 7.0
1.0
8.0
ns
-
4.6 7.9 1.0 9.0
1.0
10.5
ns
[4] -
17 -
-
-
-
-
pF
[1] tpd is the same as tPLH and tPHL.
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz; fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts
XC7SH08_1
Product data sheet
Rev. 01 — 1 September 2009
© NXP B.V. 2009. All rights reserved.
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