XC7SH08 Просмотр технического описания (PDF) - NXP Semiconductors.
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XC7SH08 Datasheet PDF : 11 Pages
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NXP Semiconductors
XC7SH08
2-input AND gate
9. Recommended operating conditions
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
VCC
VI
VO
Tamb
∆t/∆V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
10. Static characteristics
Min
Typ
Max
Unit
2.0
5.0
5.5
V
0
-
5.5
V
0
-
VCC
V
−40
+25
+125
°C
-
-
100
ns/V
-
-
20
ns/V
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
VIH
HIGH-level VCC = 2.0 V
input voltage VCC = 3.0 V
VCC = 5.5 V
VIL
LOW-level
VCC = 2.0 V
input voltage VCC = 3.0 V
VCC = 5.5 V
VOH
HIGH-level VI = VIH or VIL
output voltage IO = −50 µA; VCC = 2.0 V
IO = −50 µA; VCC = 3.0 V
IO = −50 µA; VCC = 4.5 V
IO = −4.0 mA; VCC = 3.0 V
IO = −8.0 mA; VCC = 4.5 V
VOL
LOW-level
VI = VIH or VIL
output voltage IO = 50 µA; VCC = 2.0 V
IO = 50 µA; VCC = 3.0 V
IO = 50 µA; VCC = 4.5 V
IO = 4.0 mA; VCC = 3.0 V
IO = 8.0 mA; VCC = 4.5 V
II
input leakage VI = 5.5 V or GND;
current
VCC = 0 V to 5.5 V
ICC
supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
CI
input
capacitance
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min
Max
Min
Max
1.5 -
-
1.5 -
1.5
-
V
2.1 -
-
2.1 -
2.1
-
V
3.85 -
-
3.85 -
3.85 -
V
-
-
0.5 -
0.5
-
0.5
V
-
-
0.9 -
0.9
-
0.9
V
-
-
1.65 -
1.65
-
1.65
V
1.9 2.0 -
1.9 -
1.9
-
V
2.9 3.0 -
2.9 -
2.9
-
V
4.4 4.5 -
4.4 -
4.4
-
V
2.58 -
-
2.48 -
2.40 -
V
3.94 -
-
3.8 -
3.70 -
V
-
0 0.1 -
-
0 0.1 -
-
0 0.1 -
-
-
0.36 -
-
-
0.36 -
-
-
0.1 -
-
-
1.0 -
-
1.5 10 -
0.1
-
0.1
-
0.1
-
0.44
-
0.44
-
1.0
-
10
-
10
-
0.1
V
0.1
V
0.1
V
0.55
V
0.55
V
2.0
µA
40
µA
10
pF
XC7SH08_1
Product data sheet
Rev. 01 — 1 September 2009
© NXP B.V. 2009. All rights reserved.
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