HMC7992 Просмотр технического описания (PDF) - Analog Devices

Номер в каталоге

Компоненты Описание

Список матч

HMC7992

Nonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz

Analog Devices 

Data Sheet

ABSOLUTE MAXIMUM RATINGS

Table 4.

Parameter

Bias Voltage Range (VDD)

Control Voltage Range (A, B)

RF Input Power,1 3.3 V to 5 V (see

Figure 2 and Figure 3)

Through Path

Terminated Path

Hot Switching

Channel Temperature

Storage Temperature Range

Maximum Peak Reflow Temperature

(MSL3)

Thermal Resistance (Channel to

Package Bottom)

Through Path

Terminated Path

ESD Sensitivity

Human Body Model (HBM)

Charged Device Model (CDM)

Rating

−0.3 V to +5.5 V

−0.5 V to VDD + (+0.5 V)

34 dBm

28 dBm

30 dBm

135°C

−65°C to +150°C

260°C

115°C

200°C

2 kV (Class 2)

1.25 kV

1 For recommended operating conditions, see Table 1.

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

HMC7992

36

THROUGH AMR

34

32

30

28

TERMINATED AMR

26

24

0.1

1

10

FREQUENCY (GHz)

Figure 2. Maximum RF Input Power vs. Frequency

35

THROUGH (AT 85°C)

33

THROUGH (AT 105°C)

31

29

27

25

TERMINATED (AT 85°C)

23

TERMINATED (AT 105°C)

21

19

0.1

1

10

FREQUENCY (GHz)

Figure 3. Power Derating vs. Frequency

ESD CAUTION

Rev. 0 | Page 5 of 13

Share Link: