2SC1969 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SC1969

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC1969

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CBO Collector-Base Breakdown Voltage

IC= 1mA, IE= 0

60

V

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞

25

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 5mA, IC= 0

5

V

ICBO

Collector Cutoff Current

VCB= 30V; IE= 0

0.1 mA

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

0.1 mA

www.iscsemi.cn hFE

DC Current Gain

PO

Output Power

ηC

Collector Efficiency

‹ hFE Classifications

IC= 10mA; VCE= 12V

10

16

18

VCC= 12V; Pin= 1W; f= 27MHz

60

70

180

W

%

X

A

B

C

D

10-25 20-45 35-70 55-110 90-180

isc Website：www.iscsemi.cn

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