2SC1969 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

2SC1969

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC1969

DESCRIPTION

·High Power Gain-

: Gpe≥12dB,f= 27MHz, PO= 16W

·High Reliability

APPLICATIONS

·Designed for 10~14 watts output power class AB amplifiers

applications in HF band.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

VCBO

VCEO

VEBO

IC

www.iscsemi.cn PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage RBE= ∞

Emitter-Base Voltage

VALUE UNIT

60

V

25

V

5

V

Collector Current

6

A

Collector Power Dissipation

@TC=25℃

PC

Collector Power Dissipation

@Ta=25℃

20

W

1.7

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-a

Rth j-c

Thermal Resistance,Junction to Ambient 73.5 ℃/W

Thermal Resistance,Junction to Case

6.25 ℃/W

isc Website：www.iscsemi.cn

Share Link: