R5509-42 Просмотр технического описания (PDF) - Hamamatsu Photonics

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R5509-42

PHOTOMULTIPLIER TUBES

Hamamatsu Photonics 

Sample 4

B-Doped Si (111)

low resistivity wafer ρ > 0.02 kΩcm

Silicon, the indirect bandgap semicon-

ductor, has lower photoluminescence

emission compared with direct band-

gap semiconductors such as GaAs,

InP, etc. However, the NIR-PMT has

made it possible to observe a clear

photoluminescence spectra from a

room temperature silicon wafer even

at low power excitation lights.

SAMPLE TEMPERATURE

300K

( ) room

temperature

EXCITATION LIGHT: SHG Nd: YAG (532 nm)

SLIT: 0.5 × 0.5 mm

SAMPLE TEMPERATURE: 300K

EXCITATION LIGHT

POWER: 0.05 mW

EXCITATION LIGHT

POWER: 0.6 mW

EXCITATION LIGHT

POWER: 3 mW

900

1000

1100

1200

1300

1400

WAVELENGTH (nm)

SAMPLE TEMPERATURE

TPMHB0623EA

77K

EXCITATION LIGHT: SHG Nd: YAG (532 nm)

SLIT: 0.05 × 0.05 mm

SAMPLE TEMPERATURE: 77K

EXCITATION LIGHT

POWER: 3 mW

high resistivity wafer

ρ > 5 kΩcm

Clear photolumines-

cence spectra can

be observed at room

temperature, even in

faint emission from a

high resistivity silicon

wafer.

SAMPLE TEMPERATURE

300K (room temperature)

EXCITATION LIGHT: SHG Nd: YAG (532 nm)

SLIT: 0.5 × 0.5 mm

SAMPLE TEMPERATURE: 300K

EXCITATION LIGHT

POWER: 3 mW

Data was measured with a near infrared

measurement system described later.

900

1000

1100

1200

1300

1400

WAVELENGTH (nm)

TPMHB0625EA

900

1000

1100

1200

1300

1400

WAVELENGTH (nm)

TPMHB0624EA

SAMPLE TEMPERATURE

77K

EXCITATION LIGHT: SHG Nd: YAG (532 nm)

SLIT: 0.05 × 0.05 mm

SAMPLE TEMPERATURE: 77K

EXCITATION LIGHT

POWER: 3 mW

900

1000

1100

1200

1300

1400

WAVELENGTH (nm)

TPMHB0626EA

Sample 5

InAs/InGaAs

quantum dots structure

Figure shows PL spectrum at the room temperature

from InAs quantum dots covered with InGaAs layer.

Size and uniformity of quantum dots can be estima-

ted from the peak wavelength and the FWHM of PL

spectrum.

However, when excitation power is increased, lumi-

nescence of shorter wavelength (1200 nm) becomes

strong, and the estimate of exact peak wavelength

and the FWHM becomes impossible.

Therefore, it is important that excitation power must

be kept as weak as possible for precise measure-

ment.

For this reason, a high sensitivity detector is re-

quired.

Data was measured with a near infrared measurement system described later.

SAMPLE TEMPERATURE

300K

( ) room

temperature

EXCITATION LIGHT: SHG Nd: YAG (532 nm)

SLIT: 0.2 mm / 0.2 mm

SAMPLE TEMPERATURE: 300 K

Basic Structure

EXCITATION

LIGHT

30 mW

3 mW

0.3 mW

0.03 mW

0.003 mW

1050 1100 1150 1200 1250 1300 1350 1400 1450

WAVELENGTH (nm)

TPMHB0664EA

InGaAs 15 nm

InGaAs 5 nm

GaAs buffer 300 nm

InAs dots

GaAs (100) substrate

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