BYT08P-400 Просмотр технического описания (PDF) - STMicroelectronics

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BYT08P-400

FAST RECOVERY RECTIFIER DIODES

STMicroelectronics 

BYT08P-400 / BYT08PI-400

Fig. 11: Forward recovery time versus dIF/dt (per

diode)

Fig. 12: Dynamic parameters versus junction

temperature.

tfr(µs)

1.50

1.25

1.00

0.75

0.50

0.25

0.00

0

100

dIF/dt(A/µs)

200

300

IF=IF(av)

90% confidence

Tj=100°C

400

500

Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]

1.50

1.25

1.00

0.75

IRM

0.50

0.25

0

Qrr

Tj(°C)

25

50

75

100 125 150

Fig. 13: Turn-off switching characteristics (without series inductance).

Fig. 14: Turn-off switching characteristics (with series inductance).

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