BYT08P-400 Просмотр технического описания (PDF) - STMicroelectronics
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BYT08P-400 Datasheet PDF : 7 Pages
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BYT08P-400 / BYT08PI-400
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5 δ = 0.5
δ = 0.2
0.2
δ = 0.1
Single pulse
0.1
1E-3
T
1E-2
tp(s)
δ=tp/T
1E-1
tp
1E+0
IFM(A)
100.0
10.0
Typical values
Tj=100°C
1.0
Tj=25°C
Tj=100°C
VFM(V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
Fig. 8: Recovery charges versus dIF/dt (per
diode).
C(pF)
30
28
26
24
22
20
18
16
14
12
10
1
VR(V)
10
F=1MHz
Tj=25°C
100 200
Qrr(nC)
250
200
IF=IF(av)
90% confidence
Tj=100°C
150
100
50
0
10
20
dIF/dt(A/µs)
50
100
200
Fig. 9: Recovery current versus dIF/dt (per diode).
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diode)
IRM(A)
10
IF=IF(av)
90% confidence
8
Tj=100°C
6
4
2
0
10
20
dIF/dt(A/µs)
50
100
VFP(V)
30
IF=IF(av)
90% confidence
25
Tj=100°C
20
15
10
5
0
200
0
dIF/dt(A/µs)
100
200
300
400
500
4/7
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