TK62J60W Просмотр технического описания (PDF) - Toshiba
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TK62J60W Datasheet PDF : 10 Pages
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TK62J60W
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
Vth
RDS(ON)
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 3.1 mA
VGS = 10 V, ID = 30.9 A
Min Typ. Max Unit
±1
µA
10
600
V
2.7
3.7
0.033 0.038 Ω
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
Test Condition
Min Typ. Max Unit
Ciss
VDS = 300 V, VGS = 0 V, f = 100 kHz
6500
pF
Crss
20
Coss
140
Co(er) VDS = 0 to 400 V, VGS = 0 V
200
rg
VDS = OPEN, f = 1 MHz
2
Ω
tr
See Figure 6.2.1
58
ns
ton
115
tf
15
toff
310
dv/dt VDD = 0 to 400 V, ID = 15.5 A
50
V/ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
Qg
VDD ≈ 400 V, VGS = 10 V, ID = 61.8 A
180
nC
Qgs1
Qgd
38
85
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
Test Condition
Min Typ. Max Unit
VDSF IDR = 61.8 A, VGS = 0 V
trr
IDR = 30.9 A, VGS = 0 V
Qrr
-dIDR/dt = 50 A/µs
Irr
dv/dt IDR = 30.9 A, VGS = 0 V, VDD = 400 V 15
-1.7
V
500
ns
7
µC
25
A
V/ns
3
2012-09-03
Rev.1.0
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