TK62J60W Просмотр технического описания (PDF) - Toshiba

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TK62J60W

MOSFETs Silicon N-Channel MOS (DTMOS IV)

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5. Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Channel-to-ambient thermal resistance

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: VDD = 90 V, Tch = 25 (initial), L = 5.08 mH, RG = 25 Ω, IAR = 15.5 A

TK62J60W

Symbol

Rth(ch-c)

Rth(ch-a)

Max

0.313

50

Unit

/W

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2

2012-09-03

Rev.1.0

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