XC61CC1302 Просмотр технического описания (PDF) - TOREX SEMICONDUCTOR

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XC61CC1302

Voltage detectors

TOREX SEMICONDUCTOR 

XC61C

Series

■ELECTRICAL CHARACTERISTICS

VDF (T) = 0.8V to 6.0V ± 2%

VDF (T) = 2.6V to 5.0V ± 1%

PARAMETER

SYMBOL

Detect Voltage

VDF

Hysteresis Range

VHYS

Supply Current

ISS

Operating Voltage *1

VIN

Operating Voltage *2

Output Current *1

IOUT

Output Current *2

Leak Current

Ileak

Temperature

ΔVDF

Characteristics ΔTopr･VDF

Delay Time

(VDR→VOUT inversion)

tDLY

CONDITIONS

VDF(T)=0.8V~1.5V *1

VDF(T)=1.6V~6.0V *2

VDF(T)=2.6V~5.0V *2

VIN = 1.5V

VIN = 2.0V

VIN = 3.0V

VIN = 4.0V

VIN = 5.0V

VDF(T) = 0.8V to 1.5V

VDF(T) = 1.6V to 6.0V

N-ch VDS = 0.5V

VIN = 0.7V

VIN = 1.0V

CMOS, P-ch VDS = 2.1V

VIN = 6.0V

VIN = 1.0V

VIN = 2.0V

N-ch VDS = 0.5V

VIN = 3.0V

VIN = 4.0V

VIN = 5.0V

CMOS, P-ch VDS = 2.1V VIN = 8.0V

VIN=6.0V, VOUT=6.0V*1

CMOS

VIN=10.0V, VOUT=10.0V*2 N-ch Open Drain

MIN.

VDF(T)

x 0.98

VDF(T)

x 0.99

VDF

x 0.02

-

-

-

-

-

0.7

0.7

0.10

0.85

-

1.0

3.0

5.0

6.0

7.0

-

-

-

-40℃ ≦ Topr ≦ 85℃

-

Inverts from VDR to VOUT

-

NOTE:

*1: Low Voltage: VDF(T)=0.8V~1.5V

*2: Standard Voltage: VDF(T)=1.6V~6.0V

VDF (T): Setting detect voltage

Release Voltage: VDR = VDF + VHYS

TYP.

VDF(T)

VDF(T)

VDF

x 0.05

0.7

0.8

0.9

1.0

1.1

-

-

0.80

2.70

-7.5

2.2

7.7

10.1

11.5

13.0

-10.0

10

10

±100

0.03

MAX.

VDF(T)

x 1.02

VDF(T)

x 1.01

VDF

x 0.08

2.3

2.7

3.0

3.2

3.6

6.0

10.0

-

-

-1.5

-

-

-

-

-

-2.0

-

100

-

Ta=25℃

UNITS CIRCUITS

V

1

V

1

V

1

μA 2

V

1

3

4

mA

3

4

nA

3

ppm/

-

℃

0.20 ms

5

9/19

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