NXP Semiconductors
120
Ider
(%)
80
03aa23
PH7030L
N-channel TrenchMOS logic level FET
120
Pder
(%)
80
03aa15
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aaa385
tp = 10 μ s
100 μs
DC
1 ms
10 ms
100 ms
10-1
10-1
1
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PH7030L_5
Product data sheet
Rev. 05 — 29 June 2009
© NXP B.V. 2009. All rights reserved.
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