IRF60DM206 Просмотр технического описания (PDF) - International Rectifier

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IRF60DM206

DirectFET® N-Channel Power MOSFET

International Rectifier 

IRF60DM206

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

gfs

Forward Transconductance

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

Qsync

Total Gate Charge Sync. (Qg - Qgd)

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Coss eff. (ER) Effective Output Capacitance (Energy Related)

Coss eff. (TR) Effective Output Capacitance (Time Related)

Diode Characteristics

Symbol

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

dv/dt

Peak Diode Recovery 

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IRRM

Reverse Recovery Current

Min.

148

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

Min.

–––

–––

–––

–––

–––

–––

–––

–––

–––

Typ.

–––

133

33

40

93

17

32

60

30

6530

650

420

670

840

Typ.

–––

–––

–––

8.5

47.5

48

79

84

2.9

Max. Units

Conditions

––– S VDS = 10V, ID = 80A

200

ID = 80A

–––

–––

nC

VDS =30V

VGS = 10V 

–––

–––

VDD = 30V

–––

–––

ns

ID = 30A

RG = 2.7

–––

VGS = 10V 

–––

VGS = 0V

–––

VDS = 25V

––– pF ƒ = 1.0MHz

–––

VGS = 0V, VDS = 0V to 48V 

–––

VGS = 0V, VDS = 0V to 48V 

Max. Units

Conditions

130 A MOSFET symbol

D

showing the

530

integral reverse

G

p-n junction diode.

S

1.2 V TJ= 25°C,IS = 80A, VGS = 0V

––– V/ns TJ =150°C,IS =80A, VDS = 60V

––– ns TJ = 25° C VR = 51V,

–––

TJ = 125°C IF = 80A

––– nC TJ = 25°C di/dt = 100A/µs 

–––

TJ = 125°C

––– A TJ = 25°C

Notes:

Repetitive rating; pulse width limited by max. junction Coss eff. (ER) is a fixed capacitance that gives the

temperature.

same energy as Coss while VDS is rising from 0 to

 Limited by TJ max, starting TJ = 25°C, L = 25µH

80% VDSS.

RG = 50, IAS = 80A, VGS =10V.

When mounted on 1" square PCB (FR-4 or G-10

 ISD ≤ 80A, di/dt ≤ 1410A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Material). For recommended footprint and soldering

Pulse width ≤ 400µs; duty cycle ≤ 2%.

techniques refer to application note #AN-994.

Coss eff. (TR) is a fixed capacitance that gives the

 R is measured at TJ approximately 90°C.

same charging time as Coss while VDS is rising from 0  Limited by TJ max, starting TJ = 25°C, L= 1mH, RG = 50,

to 80% VDSS.

IAS = 17.5A, VGS =10V.

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June 04, 2015

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