IRF60DM206
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Thermally limited) Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
RJA
RJA
RJA
RJC
RJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Max.
130
82
530
96
0.78
± 20
-55 to + 150
Units
A
W
W/°C
V
°C
81
154
mJ
See Fig 15, 15, 23a, 23b
A
mJ
Typ.
–––
12.5
20
–––
0.75
Max.
45
–––
–––
1.3
–––
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
38
2.2
2.7
3.0
–––
–––
–––
–––
0.8
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1.0mA
2.9 m VGS = 10V, ID = 80A
––– m VGS = 6.0V, ID = 40A
3.7
V VDS = VGS, ID = 150µA
1.0 µA VDS = 60V, VGS = 0V
150
VDS = 60V, VGS = 0V, TJ = 125°C
100 nA VGS = 20V
-100
VGS = -20V
–––
TC measured with thermocouple mounted to top (Drain) of part.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)
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June 04, 2015