FGAF20N60SMD(2013) Просмотр технического описания (PDF) - Fairchild Semiconductor
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FGAF20N60SMD Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
1000
100
td(off)
10
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 175oC
1
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC
100
td(off)
tf
10
10
20
30
40
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
10000
Eon
1000
100
10
1
10
Eoff
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC
20
30
40
Collector Current, IC [A]
Figure 14. Turn-on Characteristics vs.
Collector Current
100
tr
10
td(on)
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC
1
10
20
30
40
Collector Current, IC [A]
Figure 16. Switching Loss vs.
Gate Resistance
1000
Eon
Eoff
100
10
0
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 175oC
10 20 30 40 50
Gate Resistance, RG [Ω]
Figure 18. Turn off Switching
SOA Characteristics
100
10
Safe Operating Area
VGE = 15V, TC = 175oC
1
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
©2012 Fairchild Semiconductor Corporation
6
FGAF20N60SMD Rev. C2
www.fairchildsemi.com
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