FGAF20N60SMD(2013) Просмотр технического описания (PDF) - Fairchild Semiconductor
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FGAF20N60SMD Datasheet PDF : 10 Pages
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April 2013
FGAF20N60SMD
600 V, 20 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 20 A
• High Input Impedance
• Fast Swiching: EOFF = 7 uJ/A
• Tightened Parameter Distribution
• RoHS Compliant
Applications
• Sewing Machine, CNC
• Home Appliances, Motor-Control
General Description
Using novel field stop IGBT technology, Fairchild®’s new series
of field stop 2nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder and PFC applications
where low conduction and switching losses are essential.
C
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
G
E
Ratings
600
± 20
40
20
60
20
10
60
75
37.5
-55 to +175
-55 to +175
300
Unit
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
©2012 Fairchild Semiconductor Corporation
1
FGAF20N60SMD Rev. C2
www.fairchildsemi.com
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