STF5NK100Z(2006) Просмотр технического описания (PDF) - STMicroelectronics

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STF5NK100Z
(Rev.:2006)

N-channel 1000V - 2.7Ω - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical ratings

STP5NK100Z - STF5NK100Z - STW5NK100Z

Table 3. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS (starting Tj=25°C, Id=Iar, Vdd=50V)

Value

Unit

3.5

A

250

mJ

Table 4. Gate-source zener diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

BVGSO Gate-source breakdown voltage Igs=± 1mA (open drain) 30

V

1.1

Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

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