STF5NK100Z(2006) Просмотр технического описания (PDF) - STMicroelectronics

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STF5NK100Z
(Rev.:2006)

N-channel 1000V - 2.7Ω - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP5NK100Z - STF5NK100Z - STW5NK100Z

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

TO-220/TO-247 TO-220FP

VDS Drain-source voltage (VGS = 0)

VGS Gate-source voltage

ID Drain current (continuous) at TC = 25°C

ID

IDM(2)

Drain current (continuous) at TC=100°C

Drain current (pulsed)

PTOT

Total dissipation at TC = 25°C

Derating factor

Gate source ESD

VESD(G-S) (HBM-C=100pF, R=1.5ΚΩ)

dv/dt (3) Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1s; Tc= 25°C)

TJ Operating junction temperature

Tstg Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤3.5A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

1000

± 30

3.5

3.5 (1)

2.2

2.2 (1)

14

14 (1)

125

30

1

0.24

4000

4.5

-

2500

-55 to 150

Unit

V

V

A

A

A

W

W/°C

V

V/ns

V

°C

Table 2. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-a Thermal resistance junction-ambient max

Tl

Maximum lead temperature for soldering

purpose

Value

TO-220

TO-247

TO-220FP

1

4.2

62.5

300

Unit

°C/W

°C/W

°C

3/16

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