NCP1117DT285RKG(2014) Просмотр технического описания (PDF) - ON Semiconductor
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NCP1117DT285RKG
(Rev.:2014)
(Rev.:2014)
ON Semiconductor
NCP1117DT285RKG Datasheet PDF : 17 Pages
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NCP1117, NCV1117
ELECTRICAL CHARACTERISTICS (continued)
(Cin = 10 mF, Cout = 10 mF, for typical value TA = 25°C, for min and max values TA is the operating ambient temperature range that applies
unless otherwise noted.) (Note 4)
Characteristic
Symbol Min
Typ
Max
Unit
Quiescent Current
1.5 V (Vin = 11.5 V)
1.8 V (Vin = 11.8 V)
1.9 V (Vin = 11.9 V)
2.0 V (Vin = 12 V)
2.5 V (Vin = 10 V)
2.85 V (Vin = 10 V)
3.3 V (Vin = 15 V)
5.0 V (Vin = 15 V)
12 V (Vin = 20 V)
Thermal Regulation (TA = 25°C, 30 ms Pulse)
Ripple Rejection (Vin−Vout = 6.4 V, Iout = 500 mA, 10 Vpp 120 Hz Sinewave)
Adjustable
1.5 V
1.8 V
1.9 V
2.0 V
2.5 V
2.85 V
3.3 V
5.0 V
12 V
IQ
mA
−
3.6
10
−
4.2
10
−
4.3
10
−
4.5
10
−
5.2
10
−
5.5
10
−
6.0
10
−
6.0
10
−
6.0
10
−
0.01
0.1
%/W
RR
dB
67
73
−
66
72
−
66
70
−
66
72
−
64
70
−
62
68
−
62
68
−
60
64
−
57
61
−
50
54
−
Adjustment Pin Current (Vin = 11.25 V, Iout = 800 mA)
Iadj
−
52
120
mA
Adjust Pin Current Change
(Vin−Vout = 1.4 V to 10 V, Iout = 10 mA to 800 mA)
DIadj
−
0.4
5.0
mA
Temperature Stability
ST
−
0.5
−
%
Long Term Stability (TA = 25°C, 1000 Hrs End Point Measurement)
St
−
0.3
−
%
RMS Output Noise (f = 10 Hz to 10 kHz)
N
−
0.003
−
%Vout
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. NCP1117: Tlow = 0°C , Thigh = 125°C
NCV1117: Tlow = −40°C, Thigh = 125°C
5. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
6. The regulator output current must not exceed 1.0 A with Vin greater than 12 V.
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