RUQ050N02TR(2010) Просмотр технического описания (PDF) - ROHM Semiconductor
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RUQ050N02TR Datasheet PDF : 5 Pages
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RUQ050N02
Electrical characteristics curves
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
Coss
100
Crss
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
VDS=10V
Pulsed
0.01
0.001
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
1000
Ta=125°C
100
Ta=75°C
Ta=25°C
Ta=−25°C
VGS=4.5V
Pulsed
10
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance vs.
Drain current (Ι)
1000
tf
100
td (off)
10
1
0.01
td (on)
tr
0.1
Ta=25°C
VDD=10V
VGS=4.5V
RG=10Ω
Pulsed
1
10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
60
ID=5.0A
ID=2.5A
40
Ta=25°C
Pulsed
20
0
0 1 2 3 4 5 6 7 8 9 10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1000
VGS=2.5V
Pulsed
Ta=125°C
Ta=75°C
100
Ta=25°C
Ta=−25°C
10
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance vs.
Drain current (ΙΙ)
Data Sheet
6
Ta=25°C
VDD=10V
5
ID=5A
RG=10Ω
Pulsed
4
3
2
1
0
0 2 4 6 8 10 12 14 16
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
1
VGS=0V
Pulsed
0.1
0.01
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
Ta=125°C
Ta=75°C
Ta=25°C
100
Ta=−25°C
VGS=1.8V
Pulsed
10
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance vs.
Drain current (ΙΙΙ)
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2010.08 - Rev.A
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