RUQ050N02TR(2010) Просмотр технического описания (PDF) - ROHM Semiconductor

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RUQ050N02TR
(Rev.:2010)

1.5V Drive Nch MOSFET

ROHM Semiconductor 

1.5V Drive Nch MOSFET

RUQ050N02

Structure

Silicon N-channel MOSFET

Features

1) Low On-resistance.

2) Space saving, small surface mount package (TSMT6).

3) 1.5V drive

Applications

Switching

Dimensions (Unit : mm)

TSMT6

Each lead has same dimensions

Abbreviated symbol : XG

Packaging specifications

Package

Type

Code

Basic ordering unit (pieces)

RUQ050N02

Taping

TR

3000

Inner circuit

(6)

(5)

(4)

∗2

∗1

(1)

(2)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

(1) Drain

(2) Drain

(3) Gate

(3) (4) Source

(5) Drain

(6) Drain

Absolute maximum ratings (Ta=25C)

Parameter

Symbol

Limits

Unit

Drain-source voltage

VDSS

20

V

Gate-source voltage

VGSS

±10

V

Drain current

Continuous

ID

±5.0

A

Pulsed

IDP ∗1

±10

A

Source current

Continuous

IS

1.0

A

(Body diode)

Pulsed

ISP ∗1

10

A

Total power dissipation

PD ∗2

1.25

W

Channel temperature

Tch

150

°C

Range of storage temperature

Tstg

−55 to +150

°C

∗1 Pw 10μs, Duty cycle 1%

∗2 Mounted on a ceramic board

Thermal resistance

Parameter

Channel to ambient

∗ Mounted on a ceramic board

Symbol

Rth(ch-a) ∗

Limits

100

Unit

°C/W

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○c 2010 ROHM Co., Ltd. All rights reserved.

2010.08 - Rev.A

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