FDB86360 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDB86360 Datasheet PDF : 6 Pages
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Typical Characteristics
40
ID = 80A
30
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
20
TJ = 175oC
10
TJ = 25oC
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
2.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.6
1.2
0.8
0.4
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized Rdson vs Junction
Temperature
1.4
VGS = VDS
1.2
ID = 250μA
1.0
0.8
0.6
0.4
0.2
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
1.10
ID = 5mA
1.05
1.00
0.95
0.90
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
100000
10000
Ciss
Coss
1000
Crss
100
f = 1MHz
VGS = 0V
10
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs Drain to Source
Voltage
10
ID = 80A
8
VDD = 32V
VDD = 40V
6
VDD = 48V
4
2
0
0
50
100
150
200
250
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs Gate to Source
Voltage
FDB86360_F085 Rev. C2
5
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