FDB86360 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDB86360 Datasheet PDF : 6 Pages
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage
IDSS
Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
80
VDS = 80V, TJ = 25oC
-
VGS = 0V
TJ = 175oC(Note 4)
-
VGS = ±20V
-
-
-
V
-
1
μA
-
1
mA
-
±100 nA
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
2.0 3.0 4.5
V
ID = 80A,
TJ = 25oC
-
1.5 1.8 mΩ
VGS= 10V TJ = 175oC(Note 4) -
2.7 3.2 mΩ
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 40V
ID = 80A
- 14600 -
pF
-
4700
-
pF
-
370
-
pF
-
3.2
-
Ω
-
207 253 nC
-
27
34
nC
-
78
-
nC
-
47
-
nC
Switching Characteristics
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
-
-
VDD = 40V, ID = 80A,
-
VGS = 10V, RGEN = 6Ω
-
-
-
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
Trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 80A, VGS = 0V
-
ISD = 40A, VGS = 0V
-
IF = 80A, dISD/dt = 100A/μs,
-
VDD=64V
-
Notes:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
-
388
ns
75
-
ns
197
-
ns
86
-
ns
70
-
ns
-
226
ns
-
1.25
V
-
1.2
V
103 120
ns
212 260
nC
FDB86360_F085 Rev. C2
2
www.fairchildsemi.com
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