STTH200L04TV1 Просмотр технического описания (PDF) - STMicroelectronics
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STTH200L04TV1 Datasheet PDF : 8 Pages
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STTH200L04TV1
Characteristics
Figure 9.
Transient peak forward voltage
versus dIF/dt
(typical values, per diode)
VFP (V)
6.0
5.5
IF=IF(AV)
Tj=125°C
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 10. Forward recovery time versus dIF/dt
(typical values, per diode)
tfr (ns)
1800
1600
1400
1200
1000
800
600
400
200
0
0 50
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
dIF /dt(A/µs)
100 150 200 250 300 350 400 450 500
Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode)
C(pF)
10000
F=1MHz
VOSC=30mVRMS
Tj=25°C
1000
100
1
VR(V)
10
100
1000
Doc ID 12827 Rev 2
5/8
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