STTH200L04TV1 Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
Список матч
STTH200L04TV1 Datasheet PDF : 8 Pages
| |||
STTH200L04TV1
Characteristics
Table 5. Dynamic characteristics (per diode)
Symbol Parameter
Test conditions
Min.
trr
IRM
Sfactor
tfr
VFP
Reverse recovery
time
Reverse recovery
current
Softness factor
Forward recovery
time
Forward recovery
voltage
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 25 °C
IF = 1 A dIF/dt = 50 A/µs
VR = 30 V
IF = 1 A dIF/dt = 200 A/µs
VR = 30 V
IF = 100 A VR = 200 V
dIF/dt = 100 A/µs
IF = 100 A VR = 200 V
dIF/dt = 100 A/µs
IF = 100 A dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
IF = 100 A dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
Typ.
75
45
0.4
2.6
Max.
100
60
18
800
Unit
ns
A
ns
V
Figure 1. Conduction losses versus
Figure 2. Forward voltage drop versus
average forward current (per diode)
forward current (per diode)
P(W )
180
160
140
120
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
100
80
60
40
T
20
0
0
I F(AV) (A)
δ=tp/T
tp
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
IFM(A)
200
180
160
Tj=150°C
140
(Maximum values)
120
100
Tj=150°C
(Typical values)
80
60
40
20
VFM(V)
0
0.0
0.2
0.4
0.6
0.8
Tj=25°C
(Maximum values)
1.0
1.2
1.4
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
Peak reverse recovery current
versus dIF/dt
(typical values, per diode)
Zth(j-c) /Rth( j-c)
1.0
0.9
Single pulse
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
tP(s)
1.E-01
1.E+00
1.E+01
IRM (A)
50
45
IF=IF(AV)
VR=200V
40
Tj=125°C
35
30
25
20
15
10
5
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Doc ID 12827 Rev 2
3/8
Share Link: 