2N5060RLRMG Просмотр технического описания (PDF) - ON Semiconductor
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2N5060RLRMG Datasheet PDF : 7 Pages
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2N5060 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, Junction−to−Case (Note 2)
RqJC
75
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
curved surface.
*Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VAK = Rated VDRM or VRRM)
TC = 25°C
TC = 110°C
ON CHARACTERISTICS
*Peak Forward On−State Voltage (Note 4)
(ITM = 1.2 A peak @ TA = 25°C)
Gate Trigger Current (Continuous DC) (Note 5)
*(VAK = 7.0 Vdc, RL = 100 W)
Gate Trigger Voltage (Continuous DC) (Note 5)
*(VAK = 7.0 Vdc, RL = 100 W)
*Gate Non−Trigger Voltage
(VAK = Rated VDRM, RL = 100 W) TC = 110°C
Holding Current (Note 3)
*(VAK = 7.0 Vdc, initiating current = 20 mA)
Turn-On Time
Delay Time
Rise Time
(IGT = 1.0 mA, VD = Rated VDRM,
Forward Current = 1.0 A, di/dt = 6.0 A/ms
TC = 25°C
TC = −40°C
TC = 25°C
TC = −40°C
TC = 25°C
TC = −40°C
Turn-Off Time
(Forward Current = 1.0 A pulse,
Pulse Width = 50 ms,
0.1% Duty Cycle, di/dt = 6.0 A/ms,
dv/dt = 20 V/ms, IGT = 1 mA)
2N5060, 2N5061
2N5062, 2N5064
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(Rated VDRM, Exponential, RGK = 1 kW)
*Indicates JEDEC Registered Data.
3. RGK = 1000 W is included in measurement.
4. Forward current applied for 1 ms maximum duration, duty cycle p 1%.
5. RGK current is not included in measurement.
Symbol
Min Typ Max Unit
IDRM, IRRM
−
−
−
10 mA
−
50 mA
VTM
−
−
1.7
V
IGT
mA
−
−
200
−
−
350
VGT
−
−
0.8
V
−
−
1.2
VGD
V
0.1
−
−
IH
−
−
5.0 mA
−
−
10
ms
td
−
3.0
−
tr
−
0.2
−
tq
ms
dv/dt
−
10
−
−
30
−
−
30
− V/ms
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