NGTB25N120FLWG Просмотр технического описания (PDF) - ON Semiconductor
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NGTB25N120FLWG Datasheet PDF : 10 Pages
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NGTB25N120FLWG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
RqJC = 0.65
20%
0.1 10%
5%
2%
0.01 1%
Junction R1 R2
Ci = ti/Ri
C1 C2
Rn Case Ri (°C/W) ti (sec)
0.02659 1.0E−4
0.06231 1.76E−4
0.10246 0.002
0.2121
0.1
Cn
0.1057
2.0
0.001
0.000001
Single Pulse
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
10
100
Figure 18. IGBT Transient Thermal Impedance
1000
10
1 50% Duty Cycle
20%
10%
0.1 5%
2%
0.01 1%
Single Pulse
0.001
0.000001 0.00001
RqJC = 1.5
Junction R1 R2
Rn Case
Ci = ti/Ri
C1 C2
Cn
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 19. Diode Transient Thermal Impedance
Ri (°C/W)
0.19655
0.414
0.5
0.345
0.0934
ti (sec)
1.48E−4
0.002
0.03
0.1
2.0
100
1000
Figure 20. Test Circuit for Switching Characteristics
http://onsemi.com
7
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