NGTB25N120FLWG Просмотр технического описания (PDF) - ON Semiconductor

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NGTB25N120FLWG

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NGTB25N120FLWG

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Test Conditions

DIODE CHARACTERISTIC

Forward voltage

VGE = 0 V, IF = 25 A

VGE = 0 V, IF = 25 A, TJ = 150°C

Reverse recovery time

Reverse recovery charge

Reverse recovery current

TJ = 25°C

IF = 25 A, VR = 400 V

diF/dt = 200 A/ms

Reverse recovery time

Reverse recovery charge

Reverse recovery current

TJ = 125°C

IF = 25 A, VR = 400 V

diF/dt = 200 A/ms

Symbol

Min

Typ

Max

Unit

VF

2.2

2.8

V

2.5

trr

240

ns

Qrr

1.5

mc

Irrm

15

A

trr

260

ns

Qrr

2.0

mc

Irrm

19

A

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