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STF7N80K5

N-channel 800 V, 0.95 Ω typ., 6 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages

STMicroelectronics 

STF7N80K5, STFI7N80K5

Symbol

Parameter

td(on)

tr

td(off)

Turn-on delay time

Rise time

Turn-off delay time

tf

Fall time

Table 7: Switching times

Electrical characteristics

Test conditions

Min. Typ. Max. Unit

VDD= 400 V, ID = 3 A,

RG = 4.7 Ω

VGS = 10 V

(see Figure 15: "Test circuit

for resistive load switching

times" and Figure 20:

"Switching time waveform")

- 11.3 -

ns

- 8.3

-

ns

- 23.7 -

ns

- 20.2 -

ns

Symbol Parameter

Table 8: Source-drain diode

Test conditions

ISD Source-drain current

ISDM(1)

Source-drain current

(pulsed)

VSD(2) Forward on voltage

ISD = 6 A, VGS = 0 V

trr

Reverse recovery time

Qrr Reverrse recovery charge

IRRM Reverse recovery current

ISD = 6 A, di/dt = 100

A/µs,VDD = 60 V

(see Figure 17: "Test circuit

for inductive load switching

and diode recovery times")

trr

Reverse recovery time

Qrr Reverse recovery charge

IRRM Reverse recovery current

ISD = 6 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 17: "Test circuit

for inductive load switching

and diode recovery times")

Notes:

(1)Pulse width limited by safe operating area

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

6

A

-

24 A

-

1.5 V

- 315

ns

- 2.8

µC

- 17.5

A

- 480

ns

- 3.8

µC

- 16

A

Symbol

V(BR)GSO

Table 9: Gate-source Zener diode

Parameter

Test conditions

Gate-source breakdown

voltage

IGS= ±1 mA, ID= 0 A

Min. Typ. Max. Unit

±30 -

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.

DocID025377 Rev 2

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