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STF7N80K5

N-channel 800 V, 0.95 Ω typ., 6 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages

STMicroelectronics 

STF7N80K5, STFI7N80K5

Electrical ratings

1

Electrical ratings

Symbol

Table 2: Absolute maximum ratings

Parameter

Value

Unit

VGS

ID(1)

ID(1)

IDM(2)

PTOT

dv/dt (3)

dv/dt (4)

VISO

Tj

Tstg

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

Insulation withstand voltage (RMS) from all three leads to external

heat sink (t=1 s; TC= 25 °C)

Operating junction temperature range

Storage temperature range

±30

6

3.8

24

25

4.5

50

2500

- 55 to 150

V

A

A

A

W

V/ns

V

°C

Notes:

(1)Limited by package.

(2)Pulse width limited by safe operating area

(3)ISD ≤6 A, di/dt ≤100 A/μs, VDS(peak) ≤V(BR)DSS

(4)VDS ≤ 640 V

Symbol

Rthj-case

Rthj-amb

Table 3: Thermal data

Parameter

Thermal resistance junction-case

Thermal resistance junction-ambient

Value

5

62.5

Unit

°C/W

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Value

Unit

2

A

88

mJ

DocID025377 Rev 2

3/16

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