STL18N60M2(2014) Просмотр технического описания (PDF) - STMicroelectronics

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STL18N60M2
(Rev.:2014)

N-channel 600 V, 0.278 Ω typ., 9 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package

STMicroelectronics 

STL18N60M2

N-channel 600 V, 0.278 Ω typ., 9 A MDmesh II Plus™ low Qg

Power MOSFET in a PowerFLAT™ 5x6 HV package

Datasheet - production data

Features

1

2

3

4

PowerFLAT™ 5x6 HV

Figure 1. Internal schematic diagram

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

AM01476v1

Order code

STL18N60M2

VDS @

TJmax

650 V

RDS(on) max

ID

0.308 Ω

9A

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. This

revolutionary Power MOSFET associates a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

Order code

STL18N60M2

Table 1. Device summary

Marking

Package

18N60M2

PowerFLAT™ 5x6 HV

Packaging

Tape and reel

June 2014

This is information on a product in full production.

DocID026517 Rev 1

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