STI14NM50N(2014) Просмотр технического описания (PDF) - STMicroelectronics

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STI14NM50N
(Rev.:2014)

N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages

STMicroelectronics 

Electrical characteristics

STF14NM50N, STI14NM50N, STP14NM50N

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Symbol

Parameter

Table 5. On /off states

Test conditions

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

VDS = 500 V

drain current (VGS = 0) VDS = 500 V, TC=125 °C

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

Gate threshold voltage VDS = VGS, ID = 250 µA

Static drain-source

on-resistance

VGS = 10 V, ID = 6 A

Min. Typ. Max. Unit

500

V

1 µA

100 µA

± 100 nA

2

3

4

V

0.28 0.32 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

816

pF

-

60

- pF

3

pF

Coss eq. (1)

Equivalent output

capacitance

VDS = 0 to 50 V, VGS = 0

-

157

- pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

4.5

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD =400 V, ID =12 A,

VGS =10 V (see Figure 16)

27

nC

-

5

- nC

15

nC

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

Table 7. Switching times

Test conditions

VDD = 400 V, ID = 12 A,

RG =4.7 Ω, VGS = 10 V

(see Figure 17)

Min. Typ. Max. Unit

12

ns

16

ns

-

-

42

ns

22

ns

4/18

DocID16832 Rev 7

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