STI14NM50N(2014) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

Список матч

STI14NM50N
(Rev.:2014)

N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages

STMicroelectronics 

STF14NM50N, STI14NM50N,

STP14NM50N

N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs

in TO-220FP, I²PAK and TO-220 packages

Datasheet - production data

Features

3

2

1

TO-220FP

TAB

TAB

I2PAK 1 2 3

TO-220

3

2

1

Figure 1. Internal schematic diagram

'7$%

*

6

$0Y

Order codes

STF14NM50N

STI14NM50N

STP14NM50N

VDS @

TJmax

RDS(on)

max

ID

550 V

0.32 Ω 12 A

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

Applications

• Switching applications

Description

These devices are N-channel Power MOSFET

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

Order codes

STF14NM50N

STI14NM50N

STP14NM50N

Table 1. Device summary

Marking

Package

14NM50N

TO-220FP

I2PAK

TO-220

Packaging

Tube

June 2014

This is information on a product in full production.

DocID16832 Rev 7

1/18

www.st.com

18

Share Link: