SF16GZ51 Просмотр технического описания (PDF) - Toshiba

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SF16GZ51

THYRISTOR SILICON PLANAR TYPE

Toshiba 

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

Repetitive Peak Off−State Current and

Repetitive Peak Reverse Current

Peak On−State Voltage

Gate Trigger Voltage

Gate Trigger Current

Holding Current

Critical Rate of Rise of Off−State Voltage

Thermal Resistance

SYMBOL

TEST CONDITION

IDRM

IRRM

VTM

VGT

IGT

IH

dv / dt

Rth (j−c)

VDRM = VRRM = Rated

ITM = 50A

VD = 6V, RL = 10Ω

VD = 6V, ITM = 500mA

VDRM = Rated, Tc = 125°C

Exponential Rise

Junction to Case

SF16GZ51,SF16JZ51

MIN TYP. MAX UNIT

―

―

20

µA

―

―

1.5

V

―

―

1.5

V

―

―

15

mA

―

―

50

mA

―

50

― V / µs

―

―

1.5 °C / W

MARKING

NUMBER

*1

TYPE

SYMBOL

SF16GZ51

SF16JZ51

MARK

F16GZ51

F16JZ51

Example

*2

8A: January 1998

8B: February 1998

8L: December 1998

2

2001-07-13

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