SF16GZ51 Просмотр технического описания (PDF) - Toshiba

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SF16GZ51

THYRISTOR SILICON PLANAR TYPE

Toshiba 

SF16GZ51,SF16JZ51

TOSHIBA THYRISTOR SILICON PLANAR TYPE

SF16GZ51,SF16JZ51

MEDIUM POWER CONTROL APPLICATIONS

Unit: mm

l Repetitive Peak Off−State Voltage : VDRM = 400,600V

Repetitive Peak Reverse Voltage : VRRM = 400,600V

l Average On−State Current

: IT (AV) = 16A

l Isolation Voltage

: VIsol = 1500V AC

MAXIMUM RATINGS

CHARACTERISTIC

SYMBOL

RATING

UNIT

Repetitive Peak

Off−State Voltage and

Repetitive Peak

Reverse Voltage

SF16GZ51

SF16JZ51

Non−Repetitive Peak

Reverse Voltage

(Non−Repetitive <5ms,

Tj = 0~125°C)

SF16GZ51

SF16JZ51

Average On−State Current

(Half Sine Waveform)

R.M.S On−State Current

Peak One Cycle Surge On−State

Current (Non-Repetitive)

I2t Limit Value

Critical Rate of Rise of On−State

Curret

(Note)

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Forward Gate Voltage

Peak Reverse Gate Voltage

Peak Forward Gate Current

Junction Temperature

Storage Temperature Range

Isolation Voltage (AC, t = 1min.)

VDRM

VRRM

VRSM

IT(AV)

IT(RMS)

ITSM

I2t

di / dt

PGM

PG (AV)

VFGM

VRGM

IGM

Tj

Tstg

VIsol

400

600

500

720

16

25

250 (50Hz)

275 (60Hz)

312

100

5

0.5

10

−5

2

−40~125

−40~125

1500

V

V

A

A

A

A2s

A / µs

W

W

V

V

A

°C

°C

V

Note : di / dt Test Condition, iG = 30mA, tgw = 10µs, tgr ≤ 250ns

JEDEC

JEITA

TOSHIBA

Weight: 5.9g

―

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13−16A1B

1

2001-07-13

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