2SB858 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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2SB858

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SB857

2SB858

IC=-50mA; RBE=∞

V(BR)CBO Collector-base breakdown voltage IC=-10μA; IE=0

V(BR)EBO Emitter-base breakdown votage

IE=-10μA; IC=0

VCEsat Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A

VBE

Base-emitter voltage

IC=-1A ; VCE=-4V

ICBO

Collector cut-off current

VCB=-50V; IE=0

hFE-1

DC current gain

IC=-1A ; VCE=-4V

hFE-2

DC current gain

IC=-0.1A ; VCE=-4V

fT

Transition frequency

IC=-0.5A ; VCE=-4V

‹ hFE-1 classifications

B

C

D

60-120 100-200 160-320

Product Specification

2SB857 2SB858

MIN TYP. MAX UNIT

-50

V

-60

-70

V

-5

V

-1.0

V

-1.0

V

-1

μA

60

320

35

15

MHz

2

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