2SB858 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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2SB858 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
Product Specification
2SB857 2SB858
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SD1133/1134
APPLICATIONS
·Low frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
2SB857
2SB858
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICP
Collector current-peak
PC
Collector power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
-70
-50
-60
-5
-4
-8
40
150
-45~150
UNIT
V
V
V
A
A
W
℃
℃
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