T15M1024A(2002) Просмотр технического описания (PDF) - Taiwan Memory Technology

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T15M1024A
(Rev.:2002)

128K X 8 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

TIMING WAVEFORMS

READ CYCLE 1

(Address Controlled)

Address

tAA

tOH

D O U T Previous Data Valid

READ CYCLE 2

(Chip Enable Controlled)

tRC

Data Valid

CE1

CE2

D OUT

tACE

tOLZ

T15M1024A

tOHZ

DON'T CARE

UNDEFINED

Notes (READ CYCLE) :

1. WE are high for read cycle.

2. All read cycle timing is referenced from the last valid address to the first transition address.

3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition referenced to

VOH or VOL levels.

4. At any given temperature and voltage condition. tHZ (max.) is less than tLZ (min.) both for a given device

and from device to device interconnection.

5. Transition is measured ±200mV from steady state voltage with load. This parameter is sampled and not

100% tested.

6. Device is continuously selected with CE1 =VIL .

TM Technology Inc. reserves the right

P. 7

to change products or specifications without notice.

Publication Date: FEB. 2002

Revision:A

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