T15M1024A(2002) Просмотр технического описания (PDF) - Taiwan Memory Technology

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T15M1024A
(Rev.:2002)

128K X 8 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

T15M1024A

OPERATING CHARACTERISTICS

(Vcc = +5V / ±10%, Gnd = 0V, Ta = 0 ~ +70 °C / -40°C ~ 85°C)

PARAMETER SYM. TEST CONDITIONS

Input Leakage

Current

ILI

Vcc = Max,

VIN = Gnd to Vcc

CE1 = VIH or CE2= VIL

Output Leakage

Current

ILO or OE = VIH

or WE = VIL

VOUT= Gnd to Vcc

CE1 = VIL,CE2= VIH,

Operating Power

Supply Current

ICC

WE =VIH, OE = VIH ,

VIN = VIH or VIL,

IOUT=0mA

Cycle time=1us,

100% duty, IOUT=0mA,

ICC1 CE1 ≤ 0.2V,

Average Operating

Current

CE2 ≥ VCC-0.2V,

VIN ≤ 0.2V

Cycle time=min,

ICC2

100% duty, IOUT=0mA,

CE1 = VIL,CE2= VIH ,

VIN = VIH or VIL

Standby Power

Supply Current

(TTL Level)

CE1 =VIH

ISB CE2= VIL

Standby Power

Supply Current

(CMOS Level)

CE1 ≥ Vcc-0.2V, 0°C

CE2 ≥ VCC-0.2V to

or CE2 ≤ 0.2V

ISB1 VIN ≤ 0.2V or

VIN ≥ Vcc-0.2V

70°C

-40°C

to

85°C

Output Low Voltage VOL IOL = 2.1mA

Output High Voltage VOH IOH = -1.0 mA

-55

Min Max

-1

-1

-2

-3

- 40

- 0.5

- 15

- 20

- 0.4

2.4 -

-70

Min Max

-1

-1

-2

-3

- 35

- 0.5

- 15

- 20

- 0.4

2.4 -

-100

Min Max

-1

-1

-2

-3

- 25

- 0.5

- 15

- 20

- 0.4

2.4 -

UNIT

uA

uA

mA

mA

mA

mA

uA

V

V

TM Technology Inc. reserves the right

P. 4

to change products or specifications without notice.

Publication Date: FEB. 2002

Revision:A

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