IRL6283MTRPBF Просмотр технического описания (PDF) - International Rectifier

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IRL6283MTRPBF

DirectFET® N-Channel Power MOSFET

International Rectifier 

IRL6283MTRPbF

Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

DirectFET® Board Footprint, MD Outline

(Medium Size Can, D-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

D

G

S

D

S

S

G = GATE

D = DRAIN

S = SOURCE

D

D

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

7 www.irf.com © 2014 International Rectifier

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September 24, 2014

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